In an enhancement-mode NMOS device, what is the channel status when V_GS is below threshold?

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Multiple Choice

In an enhancement-mode NMOS device, what is the channel status when V_GS is below threshold?

Explanation:
In an enhancement-mode NMOS, a conducting channel between source and drain is created only when the gate-to-source voltage exceeds the threshold. When V_GS is below threshold, the gate voltage is not high enough to invert the surface and form a channel, so no conductive path exists between the terminals. With no channel, the device behaves like an open switch and the drain-to-source current is essentially zero, aside from tiny leakage or subthreshold currents. So the channel status is that no channel forms and the device is off.

In an enhancement-mode NMOS, a conducting channel between source and drain is created only when the gate-to-source voltage exceeds the threshold. When V_GS is below threshold, the gate voltage is not high enough to invert the surface and form a channel, so no conductive path exists between the terminals. With no channel, the device behaves like an open switch and the drain-to-source current is essentially zero, aside from tiny leakage or subthreshold currents. So the channel status is that no channel forms and the device is off.

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